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MLED Massive Transfer Laser Bonding

MLED Massive Transfer Laser Bonding

  • The device uses a 980nm infrared laser to precisely align and force control the glass carrier plate pre installed with LED chips with the target substrate before laser welding.

  • The use of duplex substrate workbenches, glass carrier workbenches, and dual CCD alignment systems maximizes equipment production capacity. Upload MES, product production data can be traced.

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MLED Massive Transfer Laser Bonding

The use of duplex substrate workbenches, glass carrier workbenches, and dual CCD alignment systems maximizes equipment production capacity. Upload MES, product production data can be traced.

Device parameters

CCD image positioning system

The equipment adopts CCD image positioning system, high-precision and high-speed linear motor, and micrometer level marble platform

Welding accuracy (X/Y)

<± 10μm

Equipped

Equipped with a automatic loading and unloading system

Device parameters

Content Specifications
Production efficiency UPH >3KK
Accuracy (X/Y)< ±10μm
Substrate Size 80×80mm-210×210mm(t0.1-2.5mm)
Welding Yield >99.997%
Infrared laser spot size 200mm*10mm
9 MITSUISEKI
10 OKAMOTO
11 Qinghong
12 Qinghong
Laser uniformity >98%
+86 0769 22105888
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